FDN537N
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Specification
Rds On-漏源导通电阻 | 36 mOhms |
Id-连续漏极电流 | 8 A |
晶体管极性 | MOSFET |
安装方式 | SMD/SMT |
Pd-功率耗散 | 1.5 W |
电路数量 | 1 Channel |
Vgs - 栅极-源极电压 | 3 V |
工作温度范围 | - 55 C~+ 150 C |
封装 | SSOT-3 |
长度 | 2.9 mm |
宽度 | 1.4 mm |
Vds-漏源极击穿电压 | 30 V |
Qg-栅极电荷 | 8.4 nC |
高度 | 1.12 mm |
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表面贴装型 N 通道 30V 6.5A(Ta),6.5A(Tc) 1.5W(Ta) SuperSOT-3
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