C3M0065090J
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Specification
Vgs - 栅极-源极电压 | 18 V, - 8 V |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 35 A |
Qg-栅极电荷 | 30 nC |
Vds-漏源极击穿电压 | 900 V |
晶体管极性 | Silicon Carbide MOSFET |
封装 | TO-263-7 |
工作温度范围 | - 55 C~+ 150 C |
Pd-功率耗散 | 113 W |
Rds On-漏源导通电阻 | 90 mOhms |
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