FDN5630
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Specification
晶体管极性 | MOSFET |
封装 | SSOT-3 |
Pd-功率耗散 | 500 mW (1/2 W) |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
长度 | 2.9 mm |
宽度 | 1.4 mm |
Id-连续漏极电流 | 1.7 A |
工作温度范围 | - 55 C~+ 150 C |
Rds On-漏源导通电阻 | 73 mOhms |
高度 | 1.12 mm |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
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