FDS8878
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Specification
高度 | 1.75 mm |
Vds-漏源极击穿电压 | 30 V |
Pd-功率耗散 | 2.5 W |
Rds On-漏源导通电阻 | 14 mOhms |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 20 V |
长度 | 4.9 mm |
宽度 | 3.9 mm |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 150 C |
封装 | SOIC-8 |
电路数量 | 1 Channel |
Id-连续漏极电流 | 10.2 A |
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