FDT86106LZ
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Specification
Qg-栅极电荷 | 4.3 nC |
高度 | 1.8 mm |
晶体管极性 | MOSFET |
Pd-功率耗散 | 2.2 W |
工作温度范围 | + 150 C |
Rds On-漏源导通电阻 | 108 mOhms |
Id-连续漏极电流 | 3.2 A |
安装方式 | SMD/SMT |
Vds-漏源极击穿电压 | 100 V |
封装 | SOT-223-4 |
电路数量 | 1 Channel |
长度 | 6.5 mm |
宽度 | 3.5 mm |
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