IPD90N04S304ATMA1
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Specification
封装 | TO-252-3 |
Vds-漏源极击穿电压 | 40V |
安装方式 | 表面贴装 |
工作温度范围 | -55°C~175°C(TJ) |
Pd-功率耗散 | 136W(Tc) |
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IPD90N04S304ATMA1
Infineon
MOSFET N-CH 40V 90A TO252-3
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