HGTG5N120BND
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HGTG5N120BND
Allchips #:
R001-HGTG5N120BND-4-H-22+-X-N
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Specification
集电极—发射极最大电压 VCEO | 1200 V |
长度 | 15.87 mm |
宽度 | 4.82 mm |
工作温度范围 | - 55 C~+ 150 C |
封装 | TO-247-3 |
高度 | 20.82 mm |
Pd-功率耗散 | 167 W |
安装方式 | Through Hole |
集电极电流Ic | 21 A |
栅极/发射极最大电压 | +/- 20 V |
栅极阈值电压-VGE(th) | +/- 20 V |
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