ISL9V3040S3ST-F085C
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Specification
Vds-漏源极击穿电压 | 400V |
工作温度范围 | -55°C~175°C(TJ) |
封装 | D²PAK-3(TO-263-3) |
Pd-功率耗散 | 150W |
晶体管极性 | ,晶体管-UGBT,MOSFET-单 |
安装方式 | 表面贴装型 |
Vgs - 栅极-源极电压 | 700ns/4.8µs |
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