MGSF2N02ELT1G
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Specification
Qg-栅极电荷 | 3.5 nC |
高度 | 0.94 mm |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 85 mOhms |
封装 | SOT-23-3 |
Vds-漏源极击穿电压 | 20 V |
晶体管极性 | MOSFET |
长度 | 2.9 mm |
宽度 | 1.3 mm |
工作温度范围 | - 55 C~+ 150 C |
Id-连续漏极电流 | 2.8 A |
Pd-功率耗散 | 1.25 W |
Vgs - 栅极-源极电压 | 4.5 V |
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Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R
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MGSF2N02ELT1G
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Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R
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MGSF2N02ELT1G
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Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R
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