MJD3055T4G
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Specification
晶体管类型 | NPN |
集电极—发射极最大电压 VCEO | 60V |
Pd-功率耗散 | 1.75W |
封装 | TO-252-2(DPAK) |
集电极电流Ic | 10A |
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FEATURED PRODUCT SOMRON
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MJD3055T4
ST Microelectronics
TRANS NPN 60V 10A DPAK
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MJD3055T4
ST Microelectronics
Trans GP BJT NPN 60V 10A 20000mW 3-Pin(2+Tab) DPAK T/R
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MJD3055T4
ST Microelectronics
TRANS NPN 60V 10A DPAK
Learn More >
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MJD3055T4
ST Microelectronics
Trans GP BJT NPN 60V 10A 20000mW 3-Pin(2+Tab) DPAK T/R
Learn More >
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MJD3055T4G
ON
Trans GP BJT NPN 60V 10A 1750mW 3-Pin(2+Tab) DPAK T/R
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MJD3055T4G
ON
NPN,Vceo=60V,Ic=10A
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MJD3055T4G
ON
Trans GP BJT NPN 60V 10A 1750mW 3-Pin(2+Tab) DPAK T/R
Learn More >
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-
-
MJD3055T4G
ON
NPN,Vceo=60V,Ic=10A
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MJD3055T4G
ON
NPN,Vceo=60V,Ic=10A
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NJVMJD3055T4G
ON
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