MMBFJ175LT1G
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Specification
Pd-功率耗散 | 225mW |
安装方式 | SMD/SMT |
晶体管极性 | JFET |
工作温度范围 | -55°C~150°C(TJ) |
封装 | SOT-23-3 |
Vgs - 栅极-源极电压 | 3V@10nA |
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MMBFJ175LT1G
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JFET P 通道 30V 225mW 表面贴装型 SOT-23-3(TO-236)
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MMBFJ175LT1G
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Trans JFET P-CH 3-Pin SOT-23 T/R
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MMBFJ175LT1G
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Trans JFET P-CH 3-Pin SOT-23 T/R
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SMMBFJ175LT1G
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TRANS JFET P-CH 30V SOT23
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SMMBFJ175LT1G
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TRANS JFET P-CH 30V SOT23
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