MMBT6520LT1G
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Specification
电路数量 | Single |
晶体管极性 | PNP |
高度 | 0.94 mm |
封装 | SOT-23-3 |
集电极—发射极最大电压 VCEO | 350V |
长度 | 2.9 mm |
宽度 | 1.3 mm |
Pd-功率耗散 | 225mW |
集电极电流Ic | 500mA |
工作温度范围 | - 55 C~+ 150 C |
安装方式 | SMD/SMT |
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Bipolar (BJT) Transistor PNP 350V 500mA 200MHz 225mW Surface Mount SOT-23-3 (TO-236)
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