MUN5113DW1T1G
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Specification
Pd-功率耗散 | 250mW |
电路数量 | Dual |
工作温度范围 | - 55 C~+ 150 C |
集电极电流Ic | 100mA |
封装 | SOT-363 |
高度 | 0.9 mm |
长度 | 2 mm |
宽度 | 1.25 mm |
集电极—发射极最大电压 VCEO | 250mV@300µA,10mA |
安装方式 | SMD/SMT |
最大集电极截止电流 | 500nA |
晶体管极性 | 2个PNP预偏压式(双) |
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