MUN5235DW1T1
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Specification
最大集电极截止电流 | 500nA |
封装 | SOT-363 |
集电极—发射极最大电压 VCEO | 250mV@300µA,10mA |
晶体管极性 | 2个NPN预偏压式(双) |
集电极电流Ic | 100mA |
Pd-功率耗散 | 250mW |
Others include "MUN5235DW1T1" parts
The following parts include 'MUN5235DW1T1'
MUN5235DW1T1 Releted Information
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MUN5235DW1T1G
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Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R
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DualBiasResistorTransistorsNPNSiliconSurfaceMountTransistorswithMonolithicBiasResistorNetwork丝印为7M
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DualBiasResistorTransistorsNPNSiliconSurfaceMountTransistorswithMonolithicBiasResistorNetwork丝印为7M
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MUN5235DW1T1G
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DualBiasResistorTransistorsNPNSiliconSurfaceMountTransistorswithMonolithicBiasResistorNetwork丝印为7M
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SMUN5235DW1T3G
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TRANS 2NPN PREBIAS 0.187W SOT363
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SMUN5235DW1T1G
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晶体管 - 双极 (BJT) - 阵列 - 预偏置 2 个 NPN 预偏压式(双) 50V 100mA 187mW 表面贴装型 SC-88/SC70-6/SOT-363
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SMUN5235DW1T1G
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Trans Digital BJT NPN 50V 100mA 385mW Automotive AEC-Q101 6-Pin SC-88 T/R
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LMUN5235DW1T1G
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数字晶体管 LMUN5235DW1T1G SC-88(SOT-363) NPN Vceo=50V Ic=100mA HEF=80-140
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SMUN5235DW1T1G
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晶体管 - 双极 (BJT) - 阵列 - 预偏置 2 个 NPN 预偏压式(双) 50V 100mA 187mW 表面贴装型 SC-88/SC70-6/SOT-363
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SMUN5235DW1T1G
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Trans Digital BJT NPN 50V 100mA 385mW Automotive AEC-Q101 6-Pin SC-88 T/R
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