NSBC114EDXV6T1G
In stock
- NSBC114EDXV6T1G Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
晶体管极性 | 2个NPN预偏压式(双) |
Pd-功率耗散 | 500mW |
集电极—发射极最大电压 VCEO | 250mV@300µA,10mA |
封装 | SOT-563,SOT-666 |
最大集电极截止电流 | 500nA |
集电极电流Ic | 100mA |
Others include "NSBC114EDXV6T1G" parts
The following parts include 'NSBC114EDXV6T1G'
NSBC114EDXV6T1G Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
NSBC114EDXV6T1G
ON
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Learn More >
-
-
-
NSBC114EDXV6T1G
ON
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Learn More >
-
- View All Newest Products from Omron