NSTB1002DXV5T1G
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Specification
Pd-功率耗散 | 500mW |
电路数量 | Dual Common Base and Collector |
晶体管极性 | 1NPN预偏压式,1PNP |
集电极—发射极最大电压 VCEO | 250mV@300µA,10mA/400mV@5mA,50mA |
高度 | 0.6 mm |
长度 | 1.7 mm |
宽度 | 1.3 mm |
安装方式 | SMD/SMT |
最大集电极截止电流 | 500nA |
封装 | SOT-553 |
集电极电流Ic | 100mA,200mA |
工作温度范围 | - 55 C~+ 150 C |
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