NTB6413ANT4G
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Specification
封装 | TO-263-3 |
Id-连续漏极电流 | 42 A |
Vgs - 栅极-源极电压 | 20 V |
Pd-功率耗散 | 136 W |
晶体管极性 | MOSFET |
工作温度范围 | - 55 C~+ 175 C |
Vds-漏源极击穿电压 | 100 V |
电路数量 | 1 Channel |
Rds On-漏源导通电阻 | 28 mOhms |
安装方式 | SMD/SMT |
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NTB6413ANT4G
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表面贴装型 N 通道 100V 42A(Tc) 136W(Tc) D2PAK
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NTB6413ANT4G
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表面贴装型 N 通道 100V 42A(Tc) 136W(Tc) D2PAK
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NTB6413ANT4G
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Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R
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