NTHD4508NT1G
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Specification
Pd-功率耗散 | 1.13 W |
安装方式 | SMD/SMT |
Vgs - 栅极-源极电压 | 12 V |
高度 | 1.05 mm |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 20 V |
晶体管极性 | MOSFET |
封装 | ChipFET-8 |
电路数量 | 2 Channel |
长度 | 3.05 mm |
宽度 | 1.65 mm |
Rds On-漏源导通电阻 | 80 mOhms |
Id-连续漏极电流 | 4.1 A |
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