NTLJS3113PT1G
Manufacturer:
Mfr. Part #:
NTLJS3113PT1G
Allchips #:
R001-NTLJS3113PT1G-4-H-2101-X-N
Description:
Trans MOSFET P-CH 20V 5.8A 6-Pin WDFN EP T/R
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Specification
Id-连续漏极电流 | 5.8 A |
封装 | WDFN-6 |
Vds-漏源极击穿电压 | 20 V |
宽度 | 2 mm |
电路数量 | 1 Channel |
长度 | 2 mm |
晶体管极性 | MOSFET |
工作温度范围 | - 55 C~+ 150 C |
Pd-功率耗散 | 1.9 W |
Vgs - 栅极-源极电压 | 8 V |
Rds On-漏源导通电阻 | 90 mOhms |
Qg-栅极电荷 | 13 nC |
高度 | 0.75 mm |
安装方式 | SMD/SMT |
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