NVD4806NT4G
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Specification
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 6 mOhms |
封装 | TO-252-3 |
工作温度范围 | -55°C~175°C(TJ) |
Pd-功率耗散 | 1.4W(Ta),68W(Tc) |
安装方式 | SMD/SMT |
资格等级 | AEC-Q101 |
Vds-漏源极击穿电压 | 30 V |
Id-连续漏极电流 | 76 A |
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