NTMFD5C650NLT1G
Manufacturer:
Mfr. Part #:
NTMFD5C650NLT1G
Allchips #:
R001-NTMFD5C650NLT1G-4-H-0000-X-Y
Description:
T6 60V LL S08FL DS
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Specification
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
Qg-栅极电荷 | 37 nC |
Id-连续漏极电流 | 111 A |
安装方式 | SMD/SMT |
封装 | DFN-8 |
Rds On-漏源导通电阻 | 4.2 mOhms |
工作温度范围 | - 55 C~+ 175 C |
电路数量 | 2 Channel |
晶体管极性 | MOSFET |
Pd-功率耗散 | 125 W |
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