NTMFS4C302NT1G
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Specification
电路数量 | 1 Channel |
Rds On-漏源导通电阻 | 1.15 mOhms |
工作温度范围 | - 55 C~+ 150 C |
Pd-功率耗散 | 96 W |
Id-连续漏极电流 | 230 A |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 20 V |
封装 | SO-8FL-8 |
安装方式 | SMD/SMT |
Qg-栅极电荷 | 82 nC |
Vds-漏源极击穿电压 | 30 V |
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Trans MOSFET N-CH 30V 41A 5-Pin SO-FL EP T/R
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