NTMFS5C670NLT1G
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Specification
Id-连续漏极电流 | 71 A |
Qg-栅极电荷 | 20 nC |
工作温度范围 | - 55 C~+ 175 C |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
封装 | SO-8-FL |
Rds On-漏源导通电阻 | 8.8 mOhms |
Pd-功率耗散 | 61 W |
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
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1400pF 超低输入电容,N沟道,60V,71A,6.1mΩ@10V
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