STN1NK80Z
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Specification
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Vds-漏源极击穿电压 | 800 V |
长度 | 6.5 mm |
Vgs - 栅极-源极电压 | 10 V |
Id-连续漏极电流 | 250 mA |
封装 | SOT-223-3 |
Pd-功率耗散 | 2.5 W |
宽度 | 3.5 mm |
晶体管极性 | Power MOSFET |
Rds On-漏源导通电阻 | 16 Ohms |
Qg-栅极电荷 | 7.7 nC |
高度 | 1.8 mm |
工作温度范围 | - 55 C~+ 150 C |
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