NTMS4916NR2G
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Specification
工作温度范围 | -55°C~150°C(TJ) |
Rds On-漏源导通电阻 | 12 mOhms |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 30 V |
封装 | SOIC-8 |
Id-连续漏极电流 | 11.6 A |
Qg-栅极电荷 | 15 nC |
Pd-功率耗散 | 1.3 W |
安装方式 | SMD/SMT |
Vgs - 栅极-源极电压 | 2.5 V |
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