NTNS3A65PZT5G
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Specification
晶体管极性 | MOSFET |
Id-连续漏极电流 | 281 mA |
Pd-功率耗散 | 155mW(Ta) |
工作温度范围 | -55°C~150°C(TJ) |
Vds-漏源极击穿电压 | 20 V |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 1.3 Ohms |
封装 | XDFN3-3 |
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表面贴装型 P 通道 20V 281mA(Ta) 155mW(Ta) SOT-883(XDFN3)(1x0.6)
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