NTTFS4C02NTAG
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Specification
Id-连续漏极电流 | 170 A |
Rds On-漏源导通电阻 | 1.9 mOhms |
Vds-漏源极击穿电压 | 30 V |
工作温度范围 | - 55 C~+ 150 C |
Vgs - 栅极-源极电压 | 20 V |
Pd-功率耗散 | 91 W |
安装方式 | SMD/SMT |
封装 | WDFN-8 |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
Qg-栅极电荷 | 20 nC |
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表面贴装型 N 通道 30V 170A(Tc) 91W(Tc) 8-WDFN(3.3x3.3)
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表面贴装型 N 通道 30V 170A(Tc) 91W(Tc) 8-WDFN(3.3x3.3)
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表面贴装型 N 通道 30V 170A(Tc) 91W(Tc) 8-WDFN(3.3x3.3)
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Trans MOSFET N-CH 30V 25A 8-Pin WDFN EP T/R
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NTTFS4C02NTAG
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表面贴装型 N 通道 30V 170A(Tc) 91W(Tc) 8-WDFN(3.3x3.3)
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