NTZD3152PT1G
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Specification
电路数量 | 2 Channel |
工作温度范围 | - 55 C~+ 150 C |
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 2 Ohms, 2 Ohms |
Qg-栅极电荷 | 1.7 nC, 1.7 nC |
高度 | 0.55 mm |
Pd-功率耗散 | 280 mW |
长度 | 1.6 mm |
宽度 | 1.2 mm |
Vds-漏源极击穿电压 | 20 V |
Id-连续漏极电流 | 430 mA |
封装 | SOT-563 |
安装方式 | SMD/SMT |
Vgs - 栅极-源极电压 | 1.8 V |
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