NVD5C688NLT4G
In stock
- NVD5C688NLT4G Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Id-连续漏极电流 | 17 A |
Qg-栅极电荷 | 7 nC |
Pd-功率耗散 | 18 W |
Vgs - 栅极-源极电压 | 16 V |
晶体管极性 | MOSFET |
工作温度范围 | - 55 C~+ 175 C |
资格等级 | AEC-Q101 |
Vds-漏源极击穿电压 | 60 V |
Rds On-漏源导通电阻 | 22.8 mOhms |
封装 | TO-252-3 |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Others include "NVD5C688NLT4G" parts
The following parts include 'NVD5C688NLT4G'
NVD5C688NLT4G Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
NVD5C688NLT4G
ON
表面贴装型 N 通道 60V 17A(Tc) 18W(Tc) DPAK
Learn More >
-
- View All Newest Products from Omron