NVMFD5C674NLT1G
In stock
- NVMFD5C674NLT1G Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Rds On-漏源导通电阻 | 11.7 mOhms |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
电路数量 | 2 Channel |
Pd-功率耗散 | 37 W |
工作温度范围 | - 55 C~+ 175 C |
封装 | DFN-8 |
Id-连续漏极电流 | 42 A |
安装方式 | SMD/SMT |
资格等级 | AEC-Q101 |
晶体管极性 | MOSFET |
Qg-栅极电荷 | 10 nC |
Others include "NVMFD5C674NLT1G" parts
The following parts include 'NVMFD5C674NLT1G'
NVMFD5C674NLT1G Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
NVMFD5C674NLT1G
ON
MOSFET - 阵列 2 N-通道(双) 60V 11A(Ta),42A(Tc) 3W(Ta),37W(Tc) 表面贴装型 8-DFN(5x6)双标记(SO8FL-双通道)
Learn More >
-
-
-
NVMFD5C674NLT1G
ON
Trans MOSFET N-CH 60V 11A Automotive AEC-Q101 8-Pin DFN EP T/R
Learn More >
-
-
-
NVMFD5C674NLT1G
ON
MOSFET - 阵列 2 N-通道(双) 60V 11A(Ta),42A(Tc) 3W(Ta),37W(Tc) 表面贴装型 8-DFN(5x6)双标记(SO8FL-双通道)
Learn More >
-
- View All Newest Products from Omron