NVMFS4C01NT1G
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Specification
Vgs - 栅极-源极电压 | 20 V |
工作温度范围 | - 55 C~+ 175 C |
封装 | SO-8-FL |
Qg-栅极电荷 | 139 nC |
Pd-功率耗散 | 161 W |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
资格等级 | AEC-Q101 |
Rds On-漏源导通电阻 | 560 uOhms |
Id-连续漏极电流 | 370 A |
Vds-漏源极击穿电压 | 30 V |
晶体管极性 | MOSFET |
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表面贴装型 N 通道 30V 49A(Ta),319A(Tc) 3.84W(Ta),161W(Tc) 5-DFN(5x6)(8-SOFL)
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