NXH80B120H2Q0SG
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Specification
集电极—射极饱和电压 | 1200V |
集电极电流Ic | 40 A |
集电极—发射极最大电压 VCEO | 1200 V |
栅极阈值电压-VGE(th) | 20 V |
封装 | Q0BOOST |
工作温度范围 | - 40 C~+ 125 C |
Pd-功率耗散 | 103 W |
安装方式 | Press Fit |
类型 | 分立半导体产品,晶体管-IGBT-模块 |
栅极/发射极最大电压 | 20 V |
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