NXH80B120H2Q0SG
In stock
- NXH80B120H2Q0SG Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
集电极—发射极最大电压 VCEO | 1200 V |
栅极阈值电压-VGE(th) | 20 V |
集电极—射极饱和电压 | 1200V |
类型 | 分立半导体产品,晶体管-IGBT-模块 |
安装方式 | Press Fit |
栅极/发射极最大电压 | 20 V |
集电极电流Ic | 40 A |
封装 | Q0BOOST |
工作温度范围 | - 40 C~+ 125 C |
Pd-功率耗散 | 103 W |
Others include "NXH80B120H2Q0SG" parts
The following parts include 'NXH80B120H2Q0SG'
NXH80B120H2Q0SG Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
NXH80B120H2Q0SG
ON
Trans IGBT Module N-CH 1200V 41A 103W 20-Pin Case 180AJ Tray
Learn More >
-
- View All Newest Products from Omron