HAT2165H-EL-E
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Specification
Pd-功率耗散 | 30W(Tc) |
Vds-漏源极击穿电压 | 30V |
晶体管极性 | MOSFET |
安装方式 | SMD/SMT |
封装 | LFPAK-5 |
工作温度范围 | 150°C(TJ) |
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