STB33N65M2
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Specification
封装 | D2PAK-3 |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 24 A |
Vgs - 栅极-源极电压 | 10 V |
Rds On-漏源导通电阻 | 140 mOhms |
Pd-功率耗散 | 190 W |
晶体管极性 | MOSFET |
工作温度范围 | + 150 C |
Vds-漏源极击穿电压 | 650 V |
Qg-栅极电荷 | 41.5 nC |
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