STB36NM60N
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Specification
封装 | TO-263-3 |
资格等级 | AEC-Q101 |
Id-连续漏极电流 | 29 A |
电路数量 | 1 Channel |
工作温度范围 | 150°C(TJ) |
安装方式 | SMD/SMT |
Pd-功率耗散 | 210 W |
Qg-栅极电荷 | 83.6 nC |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 600 V |
Rds On-漏源导通电阻 | 105 mOhms |
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