STB36NM60ND
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Specification
Pd-功率耗散 | 190 W |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 650 V |
工作温度范围 | - 55 C~+ 150 C |
Rds On-漏源导通电阻 | 110 mOhms |
资格等级 | AEC-Q101 |
电路数量 | 1 Channel |
Qg-栅极电荷 | 80.4 nC |
Id-连续漏极电流 | 29 A |
安装方式 | SMD/SMT |
封装 | TO-263-3 |
Vgs - 栅极-源极电压 | 25 V |
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