STB9NK60ZT4
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Specification
Vgs - 栅极-源极电压 | 30 V |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 7 A |
长度 | 10.4 mm |
宽度 | 9.35 mm |
Vds-漏源极击穿电压 | 600 V |
Rds On-漏源导通电阻 | 950 mOhms |
封装 | D2PAK |
高度 | 4.6 mm |
Pd-功率耗散 | 125 W |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
工作温度范围 | - 55 C~+ 150 C |
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STB9NK60ZT4
ST Microelectronics
表面贴装型 N 通道 600V 7A(Tc) 125W(Tc) D2PAK
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