STB80N4F6AG
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Specification
Qg-栅极电荷 | 36 nC |
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 6 mOhms |
电路数量 | 1 Channel |
Id-连续漏极电流 | 80 A |
工作温度范围 | - 55 C~+ 175 C |
Vgs - 栅极-源极电压 | 20 V |
资格等级 | AEC-Q101 |
Vds-漏源极击穿电压 | 40 V |
安装方式 | SMD/SMT |
封装 | TO-263-3 |
Pd-功率耗散 | 70 W |
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STB80N4F6AG
ST Microelectronics
表面贴装型 N 通道 40V 80A(Tc) 70W(Tc) D²PAK(TO-263)
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