STD1HN60K3
Manufacturer:
Mfr. Part #:
STD1HN60K3
Allchips #:
R001-STD1HN60K3-14-H-2442-X-N
Description:
Trans MOSFET N-CH 600V 1.2A 3-Pin(2+Tab) DPAK T/R
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Specification
Qg-栅极电荷 | 9.5 nC |
Id-连续漏极电流 | 1.2 A |
Pd-功率耗散 | 27 W |
安装方式 | SMD/SMT |
电路数量 | 1 Channel |
封装 | TO-252-3 |
Rds On-漏源导通电阻 | 6.7 Ohms |
Vgs - 栅极-源极电压 | 30 V |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 600 V |
晶体管极性 | MOSFET |
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