STD4N80K5
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Specification
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
Qg-栅极电荷 | 10.5 nC |
Rds On-漏源导通电阻 | 2.1 Ohms |
Vds-漏源极击穿电压 | 800 V |
安装方式 | SMD/SMT |
封装 | TO-252-3 |
Id-连续漏极电流 | 3 A |
Vgs - 栅极-源极电压 | 30 V |
工作温度范围 | - 55 C~+ 150 C |
Pd-功率耗散 | 60 W |
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