STGB19NC60HDT4
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Specification
Pd-功率耗散 | 130W |
栅极/发射极最大电压 | 20 V |
栅极阈值电压-VGE(th) | 20 V |
集电极—发射极最大电压 VCEO | 600 V |
集电极—射极饱和电压 | 2.5V @ 15V,12A |
高度 | 4.6 mm |
长度 | 10.4 mm |
宽度 | 9.35 mm |
封装 | D2PAK-3 |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 150 C |
集电极电流Ic | 40 A |
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STGB19NC60HDT4
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Vces=600V,Ic=40A,Vce(sat)=2.5V
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STGB19NC60HDT4
ST Microelectronics
Vces=600V,Ic=40A,Vce(sat)=2.5V
Learn More >
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STGB19NC60HDT4
ST Microelectronics
Vces=600V,Ic=40A,Vce(sat)=2.5V
Learn More >
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