STH150N10F7-2
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Specification
Rds On-漏源导通电阻 | 3.9 mOhms |
封装 | H2PAK-2 |
Qg-栅极电荷 | 117 nC |
Vgs - 栅极-源极电压 | 20 V |
安装方式 | SMD/SMT |
电路数量 | 1 Channel |
工作温度范围 | - 55 C~+ 175 C |
Vds-漏源极击穿电压 | 100 V |
Pd-功率耗散 | 250 W |
Id-连续漏极电流 | 110 A |
晶体管极性 | MOSFET |
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STH150N10F7-2
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表面贴装型 N 通道 100V 110A(Tc) 250W(Tc) H2Pak-2
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