STH275N8F7-6AG
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Specification
Pd-功率耗散 | 315 W |
Vds-漏源极击穿电压 | 80 V |
Vgs - 栅极-源极电压 | 20 V |
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
封装 | TO-263-7 |
Qg-栅极电荷 | 193 nC |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 175 C |
Rds On-漏源导通电阻 | 1.7 mOhms |
资格等级 | AEC-Q101 |
Id-连续漏极电流 | 180 A |
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