STH3N150-2
In stock
- STH3N150-2 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Qg-栅极电荷 | 29.3 nC |
Vgs - 栅极-源极电压 | 10 V |
Vds-漏源极击穿电压 | 1.5 kV |
Rds On-漏源导通电阻 | 9 Ohms |
封装 | H2PAK-2 |
Id-连续漏极电流 | 2.5 A |
电路数量 | 1 Channel |
Pd-功率耗散 | 140 W |
工作温度范围 | + 150 C |
晶体管极性 | MOSFET |
安装方式 | SMD/SMT |
Others include "STH3N150-2" parts
The following parts include 'STH3N150-2'
STH3N150-2 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
STH3N150-2
ST Microelectronics
N沟道,1500V,2.5A,9Ω@10V
Learn More >
-
-
-
STH3N150-2
ST Microelectronics
N沟道,1500V,2.5A,9Ω@10V
Learn More >
-
- View All Newest Products from Omron