STH3N150-2
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Specification
Qg-栅极电荷 | 29.3 nC |
Rds On-漏源导通电阻 | 9 Ohms |
Vgs - 栅极-源极电压 | 10 V |
Vds-漏源极击穿电压 | 1.5 kV |
封装 | H2PAK-2 |
Id-连续漏极电流 | 2.5 A |
电路数量 | 1 Channel |
Pd-功率耗散 | 140 W |
安装方式 | SMD/SMT |
工作温度范围 | + 150 C |
晶体管极性 | MOSFET |
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