STP110N8F6
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Specification
封装 | TO-220 |
Pd-功率耗散 | 200 W |
Qg-栅极电荷 | 150 nC |
高度 | 15.75 mm |
安装方式 | Through Hole |
晶体管极性 | MOSFET |
长度 | 10.4 mm |
宽度 | 4.6 mm |
工作温度范围 | - 55 C~+ 175 C |
电路数量 | 1 Channel |
Rds On-漏源导通电阻 | 6.5 mOhms |
Id-连续漏极电流 | 110 A |
Vgs - 栅极-源极电压 | 10 V |
Vds-漏源极击穿电压 | 80 V |
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