STP20N65M5
In stock
- STP20N65M5 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Qg-栅极电荷 | 36 nC |
Vds-漏源极击穿电压 | 650 V |
Vgs - 栅极-源极电压 | 25 V |
Rds On-漏源导通电阻 | 190 mOhms |
晶体管极性 | MOSFET |
封装 | TO-220-3 |
Pd-功率耗散 | 130 W |
安装方式 | Through Hole |
工作温度范围 | -55°C~150°C(TJ) |
电路数量 | 1 Channel |
Id-连续漏极电流 | 18 A |
Others include "STP20N65M5" parts
The following parts include 'STP20N65M5'
STP20N65M5 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
STP20N65M5
ST Microelectronics
N-Channel 650V 18A (Tc) 130W (Tc) Through Hole TO-220
Learn More >
-
- View All Newest Products from Omron