CSD19505KTTT
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Specification
工作温度范围 | - 55 C~+ 175 C |
Vds-漏源极击穿电压 | 80 V |
Qg-栅极电荷 | 76 nC |
高度 | 4.7 mm |
长度 | 9.25 mm |
安装方式 | SMD/SMT |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 20 V |
封装 | TO-263-3 |
宽度 | 10.26 |
Id-连续漏极电流 | 200 A |
电路数量 | 1 Channel |
Rds On-漏源导通电阻 | 3.1 mOhms |
Pd-功率耗散 | 300 W |
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