CSD75208W1015T
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Specification
Qg-栅极电荷 | 1.9 nC |
高度 | 0.625 mm |
Id-连续漏极电流 | 1.6 A |
安装方式 | SMD/SMT |
晶体管极性 | MOSFET |
Pd-功率耗散 | 750 mW (3/4 W) |
封装 | DSBGA-6 |
Vgs - 栅极-源极电压 | 6 V |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 20 V |
电路数量 | 2 Channel |
Rds On-漏源导通电阻 | 150 mOhms, 285 mOhms |
长度 | 1.5 mm |
宽度 | 1 mm |
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